Location
Minerals and Materials Engineering Building (M&M) 431
Contact
Ryan Bischer
989-225-2141
Access Type
Description
The RIE/ICP etcher is capable of etching wafers using flourine plasma gas reactions.
Minerals and Materials Engineering Building (M&M) 431
Ryan Bischer
989-225-2141
The RIE/ICP etcher is capable of etching wafers using flourine plasma gas reactions.