Ranjit Pati

Ranjit Pati

Contact

  • Professor, Physics
  • PhD, Theoretical Condensed Matter Physics, University at Albany, State University of New York

Biography

My current research primarily focuses on addressing some of the fundamental challenges associated with nanoscience. Specifically, this research tries to answer some of the open questions pertaining to the electron (both charge and spin) transfer process involving nanoscale junction in a non-equilibrium condition using quantum many body theory.

Links of Interest

Specialties

  • Modeling Molecular Electronics Devices

Recent Publications

  • Dhungana, Kamal B; Jaishi, M.; Pati, R. "Unlocking the Origin of Superior Performance of a Si-Ge Core-Shell Nanowire Quantum Dot Field Effect Transistor" NANO LETTERS 16 (7), 3995 (2016). Read More
  • Dhungana, Kamal B; Pati, R. "Fluorinated Boron Nitride Nanotube Quantum Dots: A Spin Filter" JOURNAL OF AMERICAN CHEMICAL SOCIETY 136, 11494(2014) Read More
  • Dhungana, Kamal B; Pati, R. "Giant amplification of tunnel magnetoresistance in a molecular junction: Molecular spin-valve transistor" APPLIED PHYSICS LETTERS 104, 16204 (2014). Read More
  • Dhungana, K. B., Pati, R., "Switching of Conductance in a Molecular Wire: Role of Junction Geometry, Interfacial Distance, and Conformational Change", JOURNAL OF PHYSICAL CHEMISTRY C 116, 17268, (2012). Read More
  • Mandal, S., Pati, R., "What determines the sign reversal of magnetoresistance in a molecular tunnel junction?" ACS NANO 6, 3580, (2012). Read More
  • Mandal,S; Pati, R. "Mechanism behind the switching of current induced by a gate field in a semiconducting nanowire junction" PHYSICAL REVIEW B 84, 115306 (2011). Read More
  • Bandyopadhyay, A.; Pati, R.; Sahu, S.; Peper, F.; Fujita, D. "Massively parallel computing on an organic molecular layer" NATURE PHYSICS 6, 369 (2010) Read More
  • Pati, R.; McClain, M.; Bandyopadhyay, A. "Origin of Negative Differential Resistance in a Strongly Coupled Single Molecule-Metal Junction Device" PHYSICAL REVIEW LETTERS 100, 246801 (2008). Read More