Thermal Processing and Advanced Deposition

Minerals and Materials Engineering Building (M&M) 428

High temperature furnaces are available for oxidation, diffusion, doping, and annealing.


Rapid Thermal Processor

The rapid thermal processor (RTP) or rapid thermal annealer allows for the heating of samples up to 1000°C in a few minutes. Wafers up to six inches can be processed in this system under oxygen or nitrogen environments.

Rapid Thermal Processor
Rapid Thermal Processor

Mellen Oxidation and Diffusion Furnace

Two Mellen clamshell furnaces are situated in room 428. These furnaces are designated for the growth of silicon oxide and thermal diffusion of n and p type dopants.  The oxidation furnace is set up for dry oxidation only (clean thermal oxidation - DRY) and therefore limited to oxide thickness of 200 nm. This makes it suitable for the fabrication of gate oxide in a metal oxide semiconductor field effect transistor.

Note:  All samples need to be RCA cleaned for these furnaces.

Available Gases

  • UHP Nitrogen
  • UHP Oxygen
Mellen Oxidation and Diffusion Furnace
Mellen Oxidation and Diffusion Furnace

2" Furnace

For small samples a two-inch furnace is available for use. This would be considered a dirty furnace as it has been used for a range of materials, including metal and annealing photoresists.

Available Gases

  • UHP Nitrogen
  • UHP Oxygen
Two Inch Furnace
2” Furnace