Minerals and Materials Engineering Building (M&M) 428
High temperature furnaces are available for oxidation, diffusion, doping, and annealing.
Atomic Layer Deposition
The ALD was built around an old Eureka 2000 ALD process chamber. The system has:
- Load lock for sample loading
- Ozone generator
- TDMAH 25 g precursor – Argon carrier gas
Easy Tube 101 Chemical Vapor Deposition (CVD) System
The FirstNano EasyTube 101 CVD system is used for the growth of carbon nanotubes (CNTs). The system can grow areas up to 25 mm × 75 mm using an iron catalyst deposited by the Fredrick electron beam deposition system. Gases used:
- Argon (Ar)
- Hydrogen (H2)
- Ethylene (C2H4)
Rapid Thermal Processor
The rapid thermal processor (RTP) or rapid thermal annealer allows for the heating of samples up to 1000°C in a few minutes. Wafers up to six inches can be processed in this system under oxygen or nitrogen environments.
Mellen Oxidation and Diffusion Furnace
Two Mellen clamshell furnaces are situated in room 428. These furnaces are designated for the growth of silicon oxide and thermal diffusion of n and p type dopants. The oxidation furnace is set up for dry oxidation only (clean thermal oxidation - DRY) and therefore limited to oxide thickness of 200 nm. This makes it suitable for the fabrication of gate oxide in a metal oxide semiconductor field effect transistor.
Note: All samples need to be RCA cleaned for these furnaces.
Available Gases
- UHP Nitrogen
- UHP Oxygen
2" Furnace
For small samples a two-inch furnace is available for use. This would be considered a dirty furnace as it has been used for a range of materials, including metal and annealing photoresists.
Available Gases
- UHP Nitrogen
- UHP Oxygen
