Paul L. Bergstrom
- EERC 630
- Professor, Electrical and Computer Engineering
- Affiliated Professor, Materials Science and Engineering
- PhD, Electrical Engineering, University of Michigan
- MS, Electrical Engineering, University of Michigan
- BS, Electrical Engineering, University of Minnesota
Paul Bergstrom’s research interests include the integration of microelectromechanical (MEMS) elements with microelectronics processing in ways which minimize the impact of the MEMS processing on the standard microelectronic (CMOS, BiCMOS, etc.) process and device parameters. This research reflects the drive towards a more globally integrated microsystem technology that allows multiple MEMS technologies to be utilized in an integrated fashion. This effort has led to research in pursuit of ways to integrated post-CMOS technologies while maintaining the good MEMS materials properties required for applications such as accelerometers, other inertial sensors, pressure sensors, radio frequency (RF) resonating elements, and actuator structures, e.g., micromirrors, liquid and gas valves, pumps, etc.
A related area of interest is the development of low-temperature MEMS structural materials and localized annealing processes for integrated microsystem technologies. New and novel deposition and material processing may allow for good mechanical and electrical properties at temperatures compatible with post-CMOS integration.
Recent areas of research activity include the development of nanoscaled processing and characterization for quantum dot-based electronic devices, such as the single-electron transistor. Effort to develop SET devices functional at room temperature has been demonstrated by Bergstrom’s research group, utilizing beam-based fabrication and nanoimprint-based processing to demonstrate the functional characterization of thousands of SET devices at room temperature and below. The quantum dot- and quantum wire-based electronic development has led to several applications for biochemical and chemical sensing platforms.
An additional area of significant research activity is in developing porous semiconductor materials for chemical, optical, and thermal microsystems. Bergstrom’s research has demonstrated morphological control of macroporous silicon for chemical microsystems and is actively demonstrating electroosmotic pumping limits based on a highly ordered 20nm mesoporous silica membrane.
Links of Interest
Areas of Interest
- Micro-electromechanical systems
- Micromachining materials and process technologies
- Inertial pressure
- Nanoscaled technologies enabling banoelectronic devices
- Technologies for the monolithic integration of sensors and actuators with electronics
- P. S. K. Karre, P. L. Bergstrom, G. Mallick, and S. P. Karna, "Room Temperature Operational Single Electron Transistor Fabricated by Focused Ion Beam Deposition," J. Applied Physics, vol. 102, 024316, July 2007.
- P. Santosh Kumar Karre, Paul L. Bergstrom, Govind Mallick, and Shashi P. Karna, "Observation of Coulomb Blockade at Room Temperature using an Array of Tungsten Nano Islands," Digest 2007 Nanoelectronic Devices for Defense & Security (NANO-DDS'07), Paper #192, Crystal City, VA, 18 – 21 June 2007, also presented.
- P. L. Bergstrom and P. S. K. Karre, "Room Temperature Quantum Electronics by Focused Ion Beam Processing," Abstracts of the First Michigan Alliance in Nano Science & Engineering (MANSE'07), Abstract #9, Oakland University, Rochester, MI, 14 May 2007, also presented.
- P. L. Bergstrom (invited), "Multi-Scale Technologies for the Integration of Room Temperature Quantum Electronics," Abstracts of the Indo-US Shared Vision Workshop on Soft, Quantum, and Nano Computing (SQUAN-2007), p. 36, Dayalbagh Educational Institute, Agra, U. P., India, February 22–25, 2007, also presented.
- J. Z. Wallner, N. Nagar, C. R. Friedrich, and P. L. Bergstrom, "Macro porous silicon as pump media for electro-osmotic pumps," Extended Abstracts of the 5th Int'l Conf. on Porous Semiconductors Science and Technology, Abstract O4–03, pp. 55–56, Sitges–Barcelona, Spain, March 12–17th, 2006, also presented. Full papers to be published in physica status solidi a.
- J. Z. Wallner, K. S. Hunt, H. Obanionwu, M. C. Oborny, P. L. Bergstrom, and E. T. Zellers, "An integrated vapor source with a porous silicon wick," Extended Abstracts of the 5th Int'l Conf. on Porous Semiconductors Science and Technology, Abstract O10–01, pp. 122–123, Sitges–Barcelona, Spain, March 12–17th, 2006, also presented. Full papers to be published in physica status solidi a.
- J. Z. Wallner and P. L. Bergstrom, "A porous silicon based particle filter for microsystems," Extended Abstracts of the 5th Int'l Conf. on Porous Semiconductors Science and Technology, Abstract O10–06, pp. 132–133, Sitges–Barcelona, Spain, March 12–17th, 2006, also presented. Full papers to be published in physica status solidi a.
- (Current) NSF Engineering Research Center for Wireless Integrated Microsystems (EEC-9986866), K.D. Wise (Center Director, UM), R.O. Warrington (MTU PI), C.R. Friedrich, P.L. Bergstrom, and M. Levy (Co-PIs), August 2000 – August 2010.
- (Current) DARPA Center for Nanomaterials Research (DAAD17-03-C-0115), C. R. Friedrich (PI), P.L. Bergstrom, P.D. Moran (Co-PIs), August 2003 – August 2008.
- (Current) AFOSR, “Self-Regenerating Nanotips: Indestructable Field-Emission Cathodes for Low-Power Electric Propulsion,” L. Brad King (PI), C. R. Friedrich, and P. L. Bergstrom, January 2007 – December 2009.
- (Current) State of Michigan 21st Century Jobs Fund (06-1-P1-0283), "Optimizing Chemo-Mechanical Structure for MEMS Chemical Vapor Sensor Arrays," M. H. Miller (PI), B. P. Bettig, G. G. Parker, H. A. Sodano, H. Liu, S. A. Green, P. L. Bergstrom, January 2007 – December 2009.
- (Pending) DARPA/DoD, "Intelligent Orthopedic Fracture Implant System (IOFIS)," C. R. Friedrich (MTU PI), P. L. Bergstrom, revision submitted March 2007.
- (Pending) Freescale Semiconductor, Inc., "Modular MEMS Technologies," P. L. Bergstrom (PI), submitted September 2005, resubmitted summer 2007.
- (Pending) NSF "GOALI: Integrating Low-Temperature MEMS into High-Density CMOS," P. L. Bergstrom (MTU PI), K. Najafi (UM PI), R. M. Roop (Freescale PI), to be submitted Oct. 2007.